p-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5587 issue 2 page 1 of 3 IRFN5210 low r ds(on) power mosfet transistor, fully avalanche rated hermetic ceramic surface mount package designed for fast switching applications screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v ds drain ? source voltage -100v v gs gate ? source voltage 20v i d continuous drain current t c = 25c -34a i d continuous drain current t c = 100c -24a i dm pulsed drain current (1) -120a p d total power dissipation at t c = 25c 150w derate above 25c 1.0w/c e as single pulse avalanche energy (2) 780mj dv/dt peak diode recovery (3) -5.0v/ns t j junction temperature range -55 to +175c t stg storage temperature range -55 to +175c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 1.0 c/w notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature (2) @v dd = -25v, l = 3.1mh, peak i l = -21a, starting t j = 25c, r g = 25 (3) @ i sd -21a, di/dt -480a/s, v dd -100v, t j 175c (4) pulse width 300us, 2%
p-channel power moset IRFN5210 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5587 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units bv dss drain-source breakdown voltage v gs = 0 i d = -250 m a -100 v j t dss bv d d temperature coefficent of breakdown voltage reference to 25c i d = -1.0ma -0.11 v/c r ds(on) static drain-source on-state resistance v gs = -10v i d = -24a (4) 0.06 v gs(th) gate threshold voltage v ds = v gs i d = -250 a -2 -4 v g fs forward transconductance v ds = -50v i ds = -21a (4) 10 s( ? ) v gs = 0 v ds = -100v -25 v gs = 0 v ds = -80v i dss zero gate voltage drain current t j = 150c -250 a i gss forward gate-source leakage v gs = 20v 100 i gss reverse gate-source leakage v gs = -20v -100 na dynamic characteristics c iss input capacitance v gs = 0 2700 c oss output capacitance v ds = 25v 790 c rss reverse transfer capacitance f = 1.0mhz 450 pf q g total gate charge v gs = -10v 180 q gs gate-source charge i d = -21a 25 q gd gate-drain charge v ds = -80v 97 nc t d(on) turn-on delay time 17 t r rise time 86 t d(off) turn-off delay time 79 t f fall time v dd = -50v i d = -21a r g = 2.5 r d = 2.4 81 ns source-drain diode characteristics i s continuous source current -34 i sm pulse source current (1) -120 a i s = -24a t j = 25c v sd diode forward voltage v gs = 0 1.6 v t rr reverse recovery time i s = -21a t j = 25c 170 260 ns q rr reverse recovery charge v dd 50v di/dt = 100a/ s (4) 1.2 1.8 c
p-channel power moset IRFN5210 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5587 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) note note note note irf521 irf521 irf521 irf5210smd also available with p 0smd also available with p 0smd also available with p 0smd also available with pad adad ads 1 and 3 reversed. s 1 and 3 reversed. s 1 and 3 reversed. s 1 and 3 reversed. 3.60 (0.142) max. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 0.89 (0.035) min. 4.14 (0.163) 3.84 (0.151) 10.69 (0.421) 10.39 (0.409) 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) 0.50 (0.020) 0.26 (0.010) 0.76 (0.030) min. 1 3 2 smd1 (to - 276ab) underside view pad 1 ? source pad 2 ? drain pad 3 ? gate
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